26 September 1984 Processing And Performance Of Guided-Wave Devices In GaAs/AℓGaAs
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Proceedings Volume 0460, Processing of Guided Wave Optoelectronic Materials I; (1984) https://doi.org/10.1117/12.939458
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
A simple technique for the fabrication of integrated optical circuits on a GaAs substrate employing LPE epitaxial layer growth of AℓGaAs and GaAs and subsequent wet chemical etching to define the circuit structure is described. Several useful structures employing lasers, waveguides and detectors are discussed along with performance specifications that we have achieved in our laboratory. Finally, the correlation of waveguide loss to epitaxial layer uniformity is described.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y R. Yuan, Y R. Yuan, G Allen Vawter, G Allen Vawter, Kazuo Eda, Kazuo Eda, James L. Merz, James L. Merz, Brian Kincaid, Brian Kincaid, } "Processing And Performance Of Guided-Wave Devices In GaAs/AℓGaAs", Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939458; https://doi.org/10.1117/12.939458
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