31 May 1984 Characterization Of Single Crystal Cu2S/CdS Heterojunctions By High Resolution Electron Microscopy
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Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984); doi: 10.1117/12.941348
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The effect of CdS surface orientation on the phase distribution and morphology of the Cu2S/CdS heterojunction has been investigated. The first high resolution transmission electron microscope (HRTEM) images of Cu2S/CdS interfaces reveal the presence of the metastable tetragonal phase in heterojunctions formed in terraced CdS surfaces. This observation is rationalized by considering i) the effects of lattice misfit, and ii) the factors influencing the nucleation of h.c.p.-to-f.c.c. transformation dislocations. The implications of this result for the reproducible fabrication of high efficiency Cu2S/CdS solar cells are discussed.
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T. Sands, R. Gronsky, J. Washburn, "Characterization Of Single Crystal Cu2S/CdS Heterojunctions By High Resolution Electron Microscopy", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941348; http://dx.doi.org/10.1117/12.941348
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KEYWORDS
Cadmium sulfide

Interfaces

Copper

Etching

Crystals

Scanning electron microscopy

Heterojunctions

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