31 May 1984 Electrical Characteristics Of Amorphous Ni36W64 Contacts On Silicon
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Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984); doi: 10.1117/12.941342
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The Schottky barrier heights of amorphous Ni36W64 film contacts on n-type and p-type silicon are 0.65 eV and 0.45 eV, respectively. The barrier heights stay constant up to 550°C for a 30 min annealing in vacuum, but the interface, the leakage current, and the ideality factors degrade at 450°C. The contact resistivities of amorphous Ni-W films is (1.4 ± 0.3) 10-6 Ωcm2 on n+Si and (8.9 ± 0.2) 10-7 0cm2 on p+Si. The values remain stable after vacuum annealing for 30 min up to 600°C.
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M. F. Zhu, I. Suni, M-A. Nicolet, "Electrical Characteristics Of Amorphous Ni36W64 Contacts On Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941342; http://dx.doi.org/10.1117/12.941342
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KEYWORDS
Silicon

Nickel

Annealing

Resistance

Diffusion

Diodes

Crystals

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