31 May 1984 Megavolt Ion Implantation Into Silicon
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Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984); doi: 10.1117/12.941340
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
Formation of buried p-type and n-type layers in silicon by megavolt ion implantation has potential to replace epitaxial growth for buried layer formation. We present arguments for the use of ion implantation for buried layer formation.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. F. Byrne, N. W. Cheung, "Megavolt Ion Implantation Into Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941340; http://dx.doi.org/10.1117/12.941340
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KEYWORDS
Ion implantation

Silicon

Diffusion

Ions

Chemical species

Arsenic

Doping

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