31 May 1984 Polarization Sensitive Raman Microprobe Studies Of Local Crystal Quality In Laser Annealed Silicon
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Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984); doi: 10.1117/12.941358
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The technique of Raman microprobe spectroscopy has been extended to allow polarization sensitive characterization of local crystal quality with lateral mapping capability. Computer minimization algorithms have been utilized to invert Raman scattering intensity versus incident laser polarization information to local crystal orientation. This microprobe method has been applied to investigate the quality of laser annealed polysilicon over oxide films. During the course of laterally seeded epitaxial regrowth of silicon over the oxide film, it was found that the annealed crystal tends to develop large grains of varied size and orientation. Measurements of the local phonon frequency shift, which monitors strain in the material, show large variations across the structures. It is demonstrated that the strain inferred from phonon frequency shifts must be interpreted in terms of the local crystal orientation.
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J. B. Hopkins, L. A. Farrow, G. J. Fisanick, "Polarization Sensitive Raman Microprobe Studies Of Local Crystal Quality In Laser Annealed Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941358; http://dx.doi.org/10.1117/12.941358
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KEYWORDS
Crystals

Raman spectroscopy

Phonons

Silicon

Polarization

Raman scattering

Scattering

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