Silicon Material Phenomena In VLSI Circuit Processing

Howard R. Huff

doi:10.1117/12.941338

31 May 1984 Silicon Material Phenomena In VLSI Circuit Processing

Howard R. Huff

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941338
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The VLSI era will require increased Active Electronic Gate (AEG) density and reduced IC leakage current. The fabrication of circuits to achieve these ends, however, is often accompanied by process-induced defects which degrade the desired circuit characteristics. This brief review will highlight the influence of several point, line and surface defects on the fabrication and electrical characteristics of devices/IC's. Several examples of bulk defect gettering and lithographic processes resulting in unique device/IC configurations to reduce these deleterious effects will then be described.

Citation Download Citation

Howard R. Huff "Silicon Material Phenomena In VLSI Circuit Processing", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941338

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