31 May 1984 Silicon Material Phenomena In VLSI Circuit Processing
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Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984); doi: 10.1117/12.941338
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The VLSI era will require increased Active Electronic Gate (AEG) density and reduced IC leakage current. The fabrication of circuits to achieve these ends, however, is often accompanied by process-induced defects which degrade the desired circuit characteristics. This brief review will highlight the influence of several point, line and surface defects on the fabrication and electrical characteristics of devices/IC's. Several examples of bulk defect gettering and lithographic processes resulting in unique device/IC configurations to reduce these deleterious effects will then be described.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Howard R. Huff, "Silicon Material Phenomena In VLSI Circuit Processing", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941338; http://dx.doi.org/10.1117/12.941338
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KEYWORDS
Crystals

Silicon

Semiconducting wafers

Transistors

Oxides

Very large scale integration

Diffusion

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