31 May 1984 The Characteristics Of Oxidation Of Polycrystalline Silicon Films In VLSI
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Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984); doi: 10.1117/12.941361
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The characteristics of oxidation of undoped and heavily phosphorus doped poly-si films deposited by LPCVD has investigated in wide temperature using wet It It is showed that when the oxidation temperature is below 900°C, the characteristics of oxidation is markedly different with that of single-crystalline silicon. For undoped poly-si films, the oxidation is faster not only than (100) si but also than (111) si; for heavily phosphorus doped poly-si films, the oxidation is slower not only than (111) si but also than (100) si. While the range of temperature is 1000-1200°C, it could be described by Deal-Grove model except the initial stage, Xi, is much longer. It is related to, and can be explained by the existance of grain boundaries.
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Wang Yang-yuan, Zhang Ai-zhen, "The Characteristics Of Oxidation Of Polycrystalline Silicon Films In VLSI", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941361; http://dx.doi.org/10.1117/12.941361
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KEYWORDS
Oxidation

Silicon

Phosphorus

Oxides

Doping

Temperature metrology

Silicon films

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