31 May 1984 Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd2Ge Formation
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Abstract
Evaporated W ≈ N 3A thick has been used as a diffusion marker during the growth of Pd2Ge. Pd films ≈ 1200Å thick were vacuum deposited onto Ge < 100 > substrates and annealed in vacuum at temperatures between 230 to 260'C for various times to form the Pd2Ge layer. MeV 4He backscattering spectrometry has been used to determine the marker displacement and Pd2Ge thickness. We find that Pd is the dominant diffusing species, making up about 2/3 of the total atomic transport. We have also measured the Pd2Ge growth kinetics in this temperature range. We find growth to be proportional to square root of time, i.e. diffusion limited, with an activation energy of 1.08 0.05eV . Thus we find the reaction of Pd with Ge to form Pd2Ge is very similar to the reaction of Pd with Si to form Pd2Si.
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D. M. Scott, D. M. Scott, C S Pai, C S Pai, S S. Lau, S S. Lau, "Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd2Ge Formation", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941345; https://doi.org/10.1117/12.941345
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