Buried-Heterostructure Q-Switched Diode Lasers

D Z Tsang; J N. Walpole; Z L. Liau; S H Groves

doi:10.1117/12.941560

10 May 1984 Buried-Heterostructure Q-Switched Diode Lasers

D Z Tsang, J N. Walpole, Z L. Liau, S H Groves

Proceedings Volume 0466, Optical Interfaces for Digital Circuits & Systems; (1984) https://doi.org/10.1117/12.941560
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

Q-switched diode lasers are of interest as a source in optical communication systems and in very high speed optical interconnects between digital circuits and systems. Buried-heterostructure Q-switched diode lasers have been made with thresholds as low as 15 mA. The lasers operate continuously at room temperature. Modulation has been observed at rates up to 7 GHz. Evidence of several modes of Q-switching has been obtained including a new mode of operation which should permit modulation at rates of several tens of gigahertz.

Citation Download Citation

D Z Tsang, J N. Walpole, Z L. Liau, and S H Groves "Buried-Heterostructure Q-Switched Diode Lasers", Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); https://doi.org/10.1117/12.941560

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available