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10 May 1984 Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater
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Proceedings Volume 0466, Optical Interfaces for Digital Circuits & Systems; (1984) https://doi.org/10.1117/12.941564
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optial signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N Bar-Chaim, K Y Lau, I Ury, and A. Yariv "Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater", Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); https://doi.org/10.1117/12.941564
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