10 May 1984 Very High Speed Gaalas Lasers And Detectors For Integrated Optoelectronic Circuits
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Proceedings Volume 0466, Optical Interfaces for Digital Circuits & Systems; (1984) https://doi.org/10.1117/12.941558
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
One of the main advantages which integrated optoelectronic circuits (IOEC's) have over discrete circuits is the ability to achieve high-frequency modulation due to a significant reduction in parasitic reactances. This is due to the elimination of bond wire connections which have high inductances and to the use of semi-insulating substrates which reduces the parasitic capacitances of bonding pads. While the active electronic devices incorporated in such circuits, e.g., GaAs metal-semiconductor field-effect transistors (MESFET) can be modulated at frequencies exceeding 30 GHz, the overall modulation bandwidth of the integrated optoelectronic circuit is limited, in general,by the frequency response of the light source (i.e., laser) and the photodetector.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K Y Lau, I Ury, N. Bar-Chaim, A Yariv, "Very High Speed Gaalas Lasers And Detectors For Integrated Optoelectronic Circuits", Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); doi: 10.1117/12.941558; https://doi.org/10.1117/12.941558


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