A New High Temperature Positive Photoresist HX-256

Medhat A Toukhy; Joe Jech Jr.

doi:10.1117/12.941790

21 May 1984 A New High Temperature Positive Photoresist HX-256

Medhat A Toukhy, Joe Jech Jr.

Proceedings Volume 0469, Advances in Resist Technology I; (1984) https://doi.org/10.1117/12.941790
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

HX-256 resist is formulated to exhibit superior image stability at elevated temperatures. This allows the resist to be used in high temperature environment processes such as ion implantation and plasma etching. A standard post-bake at 130°C. is required to minimize image dimensional change at higher temperatures. 1-2 micron images with steep profiles are produced in conventional UV exposures in the region of 350-436nm. This paper discusses the spectral properties and sensitivity of HX-256 as well as its lithographic and thermal behavior. Some data on the plasma etch rates of this resist is also provided.

Citation Download Citation

Medhat A Toukhy and Joe Jech Jr. "A New High Temperature Positive Photoresist HX-256", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941790

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