21 May 1984 An Improved Deep Ultra Violet (DUV) Multilayer Resist Process For High Resolution Lithography
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Abstract
An improved DUV multi-layer resist process is developed by using a spun-on anti-reflective coating (ARC) that has been used between the top layer resist and PMMA. By using this structure, significant advantages over the basic structure can be realized such as an elimination of interface mixture, elimination of surface reflection problems, no degradation of PMMA sensitivity, and it also eliminates the resist transmission peak at 250nm so that marginal resists such as AZ2400 and K-820 can be used. By using this improved resist structure and a developer that retains the top layer resist, plasma etching capabilities have been demonstrated on Si02, polysilicon and aluminum. Due to the planarization effect of PMMA and elimination of surface reflection, excellent pattern fidelity can be obtained down to submicron features. This improved bi-layer resist process provides a low cost, reliable method to extend the capability of current generation optical lithographic equipments. This improved process was used for high resolution device fabrication including contact holes and aluminum metallization.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. H. Ting, C. H. Ting, K. L. Liauw, K. L. Liauw, } "An Improved Deep Ultra Violet (DUV) Multilayer Resist Process For High Resolution Lithography", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941773; https://doi.org/10.1117/12.941773
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