21 May 1984 Contrast Enhanced UV Lithography With Polysilanes
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Abstract
Contrast enhanced lithography has been been applied to mid-uv projection lithography with a new class of CEL materials, polysilanes. The nonlinear bleaching photochemistry of polysilanes provides a unique "bleaching latency" for contrast enhanced lithography. SAMPLE resist exposure and development simulation is compared with experimental CEL resist images using AZ2400® photoresist. The contrast enhancement gained with the use of polysilanes is examined as a function of exposure dose, image size, and contrast enhancement film thickness.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald C. Hofer, Robert D. Miller, C.Grant Willson, Andrew R. Neureuther, "Contrast Enhanced UV Lithography With Polysilanes", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941784; https://doi.org/10.1117/12.941784
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