Image Formation In The Sublayer Of A Multilayer Resist Structure

D. Meyerhofer; L. K. White

doi:10.1117/12.941771

21 May 1984 Image Formation In The Sublayer Of A Multilayer Resist Structure

D. Meyerhofer, L. K. White

Proceedings Volume 0469, Advances in Resist Technology I; (1984) https://doi.org/10.1117/12.941771
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

The exposure and development of PMMA sublayers used in multilayer resist processing schemes have been simulated. For thick planarization sublayers (>2 μm) diffraction of the deep-UV radiation produces significant exposure variations across the resist mask apertures. This effect leads to an edge-sharpening phenomena. The Fresnel diffraction approximation is used to calculate exposure variations within the sublayer and a modified SAMPLE program to obtain the sublayer image. Estimates of the wall profiles and dimensional deviations have been obtained for various isolated space feature sizes.

Citation Download Citation

D. Meyerhofer and L. K. White "Image Formation In The Sublayer Of A Multilayer Resist Structure", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941771

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