21 May 1984 Image Formation In The Sublayer Of A Multilayer Resist Structure
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The exposure and development of PMMA sublayers used in multilayer resist processing schemes have been simulated. For thick planarization sublayers (>2 μm) diffraction of the deep-UV radiation produces significant exposure variations across the resist mask apertures. This effect leads to an edge-sharpening phenomena. The Fresnel diffraction approximation is used to calculate exposure variations within the sublayer and a modified SAMPLE program to obtain the sublayer image. Estimates of the wall profiles and dimensional deviations have been obtained for various isolated space feature sizes.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Meyerhofer, D. Meyerhofer, L. K. White, L. K. White, } "Image Formation In The Sublayer Of A Multilayer Resist Structure", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941771; https://doi.org/10.1117/12.941771

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