29 June 1984 UV/Ozone Cleaning For Organics Removal On Silicon Wafers
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Abstract
The feasibility for using a combination of ultraviolet light and ozone - UV/Ozone Cleaning - for organics removal and photoresist residue cleaning from silicon semiconductor wafers was investigated. The process generates a highly oxidative atmosphere that is specific for removing trace organic residues. Product of the reactions are carbon dioxide and water. In most cases, stable inorganic materials such as oxide coatings remain unaffected. UV/Ozone exposure of silicon causes formation of a thin layer of silicon oxide that tends to retard further oxidation of the silicon. Based on the expected photochemistry o," this process, specific enhancements to accelerate the cleaning rates were tested. The enhancements involved the use of both gas phase and liquio phase additives, and comparative rates of removal were determined. The technique was tested on several photoresists, potential organic residues, and common solvent systems. The photoresists studies were primarily positive resists and were tested at several levels of ion implantation. The results of the testing suggests that the highest potential applications of UV/Ozone Cleaning in the processing of semiconductor wafers include: a) Removal of solvent residues and process contaminants. b) A pre-process step to insure cleanliness by removal of residual organic or airborne organic contaminants. c) As a post-process step to insure cleanliness or to remove trace organics.
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Leo Zafonte, Leo Zafonte, Rafael Chiu, Rafael Chiu, } "UV/Ozone Cleaning For Organics Removal On Silicon Wafers", Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); doi: 10.1117/12.941910; https://doi.org/10.1117/12.941910
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