Enhanced Pattern Accuracy With Mebes III

J. Freyer; K. Standiford; R Sills

doi:10.1117/12.942308

18 June 1984 Enhanced Pattern Accuracy With Mebes III

J. Freyer, K. Standiford, R Sills

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942308
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Optical lithography continues to improve resolution, further reducing minimum feature sizes in semiconductor device production. A critical step in this process is generation of masks with exceptional accuracy. The MEBES III electron beam lithography system was designed and built to fulfill the requirements of l to 2 micrometer technology and below. The results of overlay machine performance indicate that MEBES consistently meets and surpasses its overlay specifications. This paper discusses the philosophy behind the MEBES III design, the development of metrology methods to verify performance, and the measured accuracy of several machines in a production environment. Measurement tools internal to the MEBES system are compared to a Nikon model 21 X-Y measurement system to verify accuracy of the analysis.

Citation Download Citation

J. Freyer, K. Standiford, and R Sills "Enhanced Pattern Accuracy With Mebes III", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942308

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