18 June 1984 Masked Ion Beam Lithography Using Stencil Masks
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Abstract
Masked ion beam lithography has the potential to become a high resolution proximity printing technique which is capable of short exposure times. When used for proximity printing, the resolution of masked ion beam lithography is limited by the interaction of the transmitted ions with the ion beam mask. A straightforward approach to eliminating the mask induced scattering is to use a stencil mask where the transmission areas are simply holes in the mask. We have been developing an exposure process that uses a grid support mask which replaces completely open areas with a fine grid. The image of the grid can be eliminated by rocking the incident angle of the beam. We will discuss a fabrication procedure for such a mask as well as investigations into its uses and limitations.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. N Randall, D C Flanders, N P Economou, "Masked Ion Beam Lithography Using Stencil Masks", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942319; https://doi.org/10.1117/12.942319
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KEYWORDS
Photomasks

Ion beams

Ions

Ion beam lithography

Lithography

Polymethylmethacrylate

Silicon

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