18 June 1984 POLY(2,2,2-Trifluoroethyl A-Chloroacrylate) PTFECA, A High Sensitivity Ion Resist
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For masked ion beam lithography (MIBL) beam-induced mask heating can cause deformations and image distortion. This can be avoided by the use of a resist ten times more sensitive than PMMA. Poly(2,2,2-trifluoroethyl -chloroacrylate), PTFECA, has been shown to be about ten times more sensitive than PMMA for proton beam exposures at 100 keV, and has demonstrated sub-half-micron resolution. The etch characteristics of PTFECA, however, are not as good as PMMA.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John E. Jensen, John E. Jensen, Charles W. Slayman, Charles W. Slayman, } "POLY(2,2,2-Trifluoroethyl A-Chloroacrylate) PTFECA, A High Sensitivity Ion Resist", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942321; https://doi.org/10.1117/12.942321


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