Retarding Field Optics For Practical Electron Beam Lithography

T. H Newman; RF. W Pease

doi:10.1117/12.942313

18 June 1984 Retarding Field Optics For Practical Electron Beam Lithography

T. H Newman, RF. W Pease

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942313
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Recent work in retarding field optics for electron beam lithography has concentrated on the advantages to be gained for low electron landing energies (< 4 keV). We have examined the benefits obtained from the use of a retarding field when the electron landing energy is conventional (10-20 keV), eliminating the necessity for novel resist systems. The improved aberrations resulting from the use of a retarding field are discussed, and the reduction of space charge effects is simulated using a Monte Carlo calculation. Preliminary results indicate that a four-fold increase in current can be realized for a beam of given sharpness by using the retarding field. Practical considerations for implementing retarding field optics are examined.

Citation Download Citation

T. H Newman and RF. W Pease "Retarding Field Optics For Practical Electron Beam Lithography", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942313

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