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18 June 1984 Retarding Field Optics For Practical Electron Beam Lithography
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Abstract
Recent work in retarding field optics for electron beam lithography has concentrated on the advantages to be gained for low electron landing energies (< 4 keV). We have examined the benefits obtained from the use of a retarding field when the electron landing energy is conventional (10-20 keV), eliminating the necessity for novel resist systems. The improved aberrations resulting from the use of a retarding field are discussed, and the reduction of space charge effects is simulated using a Monte Carlo calculation. Preliminary results indicate that a four-fold increase in current can be realized for a beam of given sharpness by using the retarding field. Practical considerations for implementing retarding field optics are examined.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. H Newman and RF. W Pease "Retarding Field Optics For Practical Electron Beam Lithography", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942313
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