15 October 1984 Critical Dimension Measurement In The Scanning Electron Microscope
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Proceedings Volume 0480, Integrated Circuit Metrology II; (1984) https://doi.org/10.1117/12.943055
Event: 1984 Technical Symposium East, 1984, Arlington, United States
Abstract
The progression of Semiconductor device sizes into the submicron region requires inspection and measurement techniques with higher resolution than that presently available with the optical microscope. The increasing need of the semiconductor industry for accurate dimensional measurement and inspection in the submicron range for LSI, VLSI and VSHIC circuitry has led it to the higher resolution and depth of field afforded by the SEM In-process inspection and critical dimension measurement of these devices has been facilitated due to recent developments and applications which reduce,minimize and possibly eliminate sample damage and contamination. This paper will present one method for the acquisition of critical dimension measurements using video profile analysis and will discuss some of the factors that affect these profiles.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael T. Postek, Michael T. Postek, } "Critical Dimension Measurement In The Scanning Electron Microscope", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); doi: 10.1117/12.943055; https://doi.org/10.1117/12.943055
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