Theory Of Non-Linear Index Of Refraction Of Compound Semiconductors

B. Jensen; A. Torabi

doi:10.1117/12.943158

16 October 1984 Theory Of Non-Linear Index Of Refraction Of Compound Semiconductors

B. Jensen; A. Torabi;

Author Affiliations +

Proceedings Volume 0484, Infrared Optical Materials and Fibers III; (1984) https://doi.org/10.1117/12.943158
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

The non-linear index of refraction of a compound semiconductor is calculated below the fundamental absorption edge as a function of incident laser field intensity, frequency and basic material parameters such as band gap energy, effective electron mass, heavy hole mass, spin orbit splitting energy and lattice constant. No adjustable parameters are involved. Theoretical results are obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. Comparison of theory with experimental results for the ternary compound Hg_l-xCdxTe and binary compound InSb is discussed.

Citation Download Citation

B. Jensen, A. Torabi, "Theory Of Non-Linear Index Of Refraction Of Compound Semiconductors", Proc. SPIE 0484, Infrared Optical Materials and Fibers III, (16 October 1984); doi: 10.1117/12.943158; https://doi.org/10.1117/12.943158

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years