The non-linear index of refraction of a compound semiconductor is calculated below the fundamental absorption edge as a function of incident laser field intensity, frequency and basic material parameters such as band gap energy, effective electron mass, heavy hole mass, spin orbit splitting energy and lattice constant. No adjustable parameters are involved. Theoretical results are obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. Comparison of theory with experimental results for the ternary compound Hgl-xCdxTe and binary compound InSb is discussed.
"Theory Of Non-Linear Index Of Refraction Of Compound Semiconductors", Proc. SPIE 0484, Infrared Optical Materials and Fibers III, (16 October 1984); doi: 10.1117/12.943158; https://doi.org/10.1117/12.943158