Study On The Electrical And Optical Properties Of A-Si1-x Sn X:H Films Prepared By Sputtering

Chen Guang-hua; Zhang Nan-ping; He De-yan; Zhang Fang-qing

doi:10.1117/12.944796

2 November 1984 Study On The Electrical And Optical Properties Of A-Si1-x Sn X:H Films Prepared By Sputtering

Chen Guang-hua, Zhang Nan-ping, He De-yan, Zhang Fang-qing

Proceedings Volume 0502, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III; (1984) https://doi.org/10.1117/12.944796
Event: 28th Annual Technical Symposium, 1984, San Diego, United States

Abstract

Hydrogenated amorphous silicon-tin alloy (a-Si1_xSnx:H) films were prepared by simultaneous rf sputtering of polycrystalline silicon and tin in a H2- Ar gas mixture. The optical gap E0 of the films depends on alloy composition x and preparation conditions. As tin content increases, the optical gap of the films becomes narrower linearly, but the dark conductivity increases exponentially. For films at lower substrate temperature and target power density, the optical gap becomes wider.

Citation Download Citation

Chen Guang-hua, Zhang Nan-ping, He De-yan, and Zhang Fang-qing "Study On The Electrical And Optical Properties Of A-Si1-x Sn X:H Films Prepared By Sputtering", Proc. SPIE 0502, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III, (2 November 1984); https://doi.org/10.1117/12.944796

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