A Nondestructive Technique For Preprocessing Semiconductor Material

G. A. Tanton; C. G. Walker; J. A. Grisham; Syed Razi

doi:10.1117/12.964650

26 December 1984 A Nondestructive Technique For Preprocessing Semiconductor Material

G. A. Tanton, C. G. Walker, J. A. Grisham, Syed Razi

Proceedings Volume 0505, Advances in Optical Materials; (1984) https://doi.org/10.1117/12.964650
Event: 28th Annual Technical Symposium, 1984, San Diego, United States

Abstract

New applications of advanced semiconductor materials, as for example in two-color missile seekers or focal plane arrays generate a need for faster, more detailed material characterization at the wafer level. Conventional contact bonding methods are severely limited in this respect, especially in high production rate situations. A cost effective technique that seeks to satisfy this need is presented here together with results of a feasibility investigation using wafers of very high quality single crystal CdS, an advanced detector material for the STINGER-POST air defense missile. These results indicate that Faraday Rotation (FR) could be used initially as the first step in screening wafers, and could potentially become the preferred method of characterization.

Citation Download Citation

G. A. Tanton, C. G. Walker, J. A. Grisham, and Syed Razi "A Nondestructive Technique For Preprocessing Semiconductor Material", Proc. SPIE 0505, Advances in Optical Materials, (26 December 1984); https://doi.org/10.1117/12.964650

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