26 December 1984 Growth Of Large-Diameter Crystals By Hem Tmfor Optical And Laser Applications
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Abstract
The Heat Exchanger Method (HEM), a new crystal growth process, is in commercial production for 20 cm diameter sapphire crystals and 40 cm diameter silicon ingots for optical applications. The simplicity of the HEM combined with a very high degree of control of the submerged, solid-liquid interface allows growth of high-quality crystals. The HEM is also being adapted for the growth of Co:MgF2, Ti:A1203 and Cr:A1203 crystals for laser applications.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. P. Khattak, C. P. Khattak, F. Schmid, F. Schmid, "Growth Of Large-Diameter Crystals By Hem Tmfor Optical And Laser Applications", Proc. SPIE 0505, Advances in Optical Materials, (26 December 1984); doi: 10.1117/12.964616; https://doi.org/10.1117/12.964616
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