High-Speed Photodetector Switching

Brian J. Markey

doi:10.1117/12.945165

29 January 1985 High-Speed Photodetector Switching

Brian J. Markey

Proceedings Volume 0517, Integrated Optical Circuit Engineering I; (1985) https://doi.org/10.1117/12.945165
Event: 1984 Cambridge Symposium, 1984, Cambridge, United States

Abstract

A study was made of a new photodetector switching circuit which incorporates a switching transistor in series with a photodiode. A PIN photodiode was switched between reverse and zero bias to switch intensity-modulated optical signals. Isolation of 40 dB was measured from 50 MHz to 1 GHz, and average switch transition times of 30 ns were measured.

Citation Download Citation

Brian J. Markey "High-Speed Photodetector Switching", Proc. SPIE 0517, Integrated Optical Circuit Engineering I, (29 January 1985); https://doi.org/10.1117/12.945165

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available