29 January 1985 Waveguide Fabrication Techniques In AlGaAs/GaAℓAs
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Proceedings Volume 0517, Integrated Optical Circuit Engineering I; (1985) https://doi.org/10.1117/12.945132
Event: 1984 Cambridge Symposium, 1984, Cambridge, United States
Abstract
The various techniques that have been used to fabricate waveguides in GaAs/GaAkAs are reviewed; including p-n junction, carrier-concentration-reduction, heteroepitaxial growth, and strip-loading methods. The results of this survey show that it is possible to produce waveguides in GaAs/GaAkAs with losses less than 2 dB/cm for wavelengths ranging from 1.06 to 10.6μm. In some cases losses as low as 1 dB/cm have been observed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert G. Hunsperger, Robert G. Hunsperger, } "Waveguide Fabrication Techniques In AlGaAs/GaAℓAs", Proc. SPIE 0517, Integrated Optical Circuit Engineering I, (29 January 1985); doi: 10.1117/12.945132; https://doi.org/10.1117/12.945132
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