28 June 1985 Application Of X-Ray Diffraction Techniques To Semiconductor Materials Characterization
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Abstract
X-ray diffraction experiments directly and nondestructively probe atomic scale structural correlations. When the samples are crystalline, x-ray scattering patterns may be obtained quickly and show extremely high sensitivity to variations in structural order. X-ray topography methods are specially arranged so as to cover large sample areas efficiently. All of these features are particularly useful in the semiconductor industry where careful control of crystalline perfection in nearly perfect materials is essential for device fabrication. This report highlights a few basic methods of semiconductor characterization using x-ray diffraction and serves as an introduction to the literature with an emphasis on topics of interest to a semiconductor process development engineer. The topics include double crystal x-ray diffraction, asymmetric crystal topography and Lang topography. In additon, since the use of synchrotron radiation sources is of growing importance for materials research programs in the semiconductor industry, its use in white beam topography is discussed. All of these experiments have been usefully pursued at Hewlett-Packard Laboratories. The references chosen show typical applications, but are far from exhaustive. Except for the synchrotron radiation techniques, the experiments can all be performed with commercially available equipment.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. S. Laderman, M. Scott, R. Smith, A. Nel, "Application Of X-Ray Diffraction Techniques To Semiconductor Materials Characterization", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946314; https://doi.org/10.1117/12.946314
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