Characterization Of Amorphous And Polycrystalline Si and Ge Films

J. Gonzalez-Hernandez; S. S. Chao; D. Martin; R. Tsu

doi:10.1117/12.946329

28 June 1985 Characterization Of Amorphous And Polycrystalline Si and Ge Films

J. Gonzalez-Hernandez, S. S. Chao, D. Martin, R. Tsu

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946329
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

We have used various techniques to characterize the structure, electrical and optical properties of amorphous and polycrystalline Si and Ge films. From Raman scattering measurements, the changes in structural order for various types of a-Si systems have been characterized. From the measured Raman linewidth of the transverse optical phonons for annealed Si and Ge films, the mean deviation of the tetrahedral angle has been obtained, which leads to an activation energy for the relaxation in the amorphous phase. A systematic analysis of the structure and physical properties of polycrystalline films prepared by molecular beam deposition(MBD) under ultra-high-vacuum, has been carried out. The crystal-lization temperature, texture, and grain-size were examined as a function of deposition conditions including the effects of residual gas species. A definite correlation has been established between the electrical and optical properties and the measured structural parameters.

Citation Download Citation

J. Gonzalez-Hernandez, S. S. Chao, D. Martin, and R. Tsu "Characterization Of Amorphous And Polycrystalline Si and Ge Films", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946329

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