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28 June 1985 Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification
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Abstract
This paper presents an overview of the application of deep level transient spectroscopy (DLTS) for the characterization and identification of electronic defects in semiconductors. The range of defect problems that has been studied by DLTS is illustrated with results from crystalline semiconductors, semiconductor - insulator interfaces, and amorphous semiconductors,
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. M. Johnson "Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946317
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