28 June 1985 Deep Level Studies Of Undoped CdTe
Author Affiliations +
Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985); doi: 10.1117/12.946321
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
Deep level studies of undoped semi-insulating CdTe were made using Schottky barrier diodes prepared with aluminum as the barrier metal. Four deep levels located at 208, 246, 455 and 585 meV above the valence band were seen in deep level capacitance transient spectroscopy (DLTS) data. Deep level densities were found to be 6.5x1012, 2.4x10", 6.3x1012 and 1.2x1013cm-8, respectively. DLTS data were supplemented by thermally stimulated capacitance (TSCAP) and admittance spectroscopy. The possibility of a deep level due to interface states is discussed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. S. Nayar, "Deep Level Studies Of Undoped CdTe", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946321; https://doi.org/10.1117/12.946321
PROCEEDINGS
10 PAGES


SHARE
KEYWORDS
Capacitance

Diodes

Spectroscopy

Aluminum

Copper

Crystals

Cadmium

Back to Top