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28 June 1985 Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors
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Abstract
Electron Paramagnetic Resonance is a valuable tool for the characterization of defects in semiconductors. After a short introduction into the method, various examples are discussed in detail. These include intrinsic and impurity-related point defects in silicon, transition metals in semiconductors, and antisite defects in III-V compounds.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eicke R. Weber "Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946333
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