28 June 1985 Ion Beam Spectroscopy For III - V Semiconductor Characterization
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Abstract
A detailed discussion is presented concerning the use of the ion beam spectroscopic techniques of RBS, PIXE, and channeling. Emphasis is placed on extracting relevant atom site information of impurities and alloy elements in the III - V compound semiconductor series. This is accomplished through integration of the three types of spectroscopy mentioned with data being presented on specific site location of substitutional impurities through plannar contstrained assymetric angular scans across axial channeling directions.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. P. Pronko, P. P. Pronko, R. S. Bhattacharya, R. S. Bhattacharya, } "Ion Beam Spectroscopy For III - V Semiconductor Characterization", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946316; https://doi.org/10.1117/12.946316
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