Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures

O. J. Glembocki; B. V. Shanabrook; N. Bottka; W. T. Beard; J. Comas

doi:10.1117/12.946323

28 June 1985 Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures

O. J. Glembocki, B. V. Shanabrook, N. Bottka, W. T. Beard, J. Comas

Author Affiliations +

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946323
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The optical modulation technique of photoreflectance (PR) has been applied to the characterization of GaAs/AlGaAs thin films, multiple quantum wells (MQW) and modulation-doped heterojunctions exhibiting a two dimensional electron gas (2DEG). It is shown that PR can yield much' of the same information as electroreflectance but because of its contactless nature PR is easier to implement and thus ideal for the characterization of microstructures.

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O. J. Glembocki, B. V. Shanabrook, N. Bottka, W. T. Beard, and J. Comas "Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946323

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