28 June 1985 Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures
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Abstract
The optical modulation technique of photoreflectance (PR) has been applied to the characterization of GaAs/AlGaAs thin films, multiple quantum wells (MQW) and modulation-doped heterojunctions exhibiting a two dimensional electron gas (2DEG). It is shown that PR can yield much' of the same information as electroreflectance but because of its contactless nature PR is easier to implement and thus ideal for the characterization of microstructures.
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O. J. Glembocki, O. J. Glembocki, B. V. Shanabrook, B. V. Shanabrook, N. Bottka, N. Bottka, W. T. Beard, W. T. Beard, J. Comas, J. Comas, } "Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946323; https://doi.org/10.1117/12.946323
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