Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon

D. M. Roberts; J. F. Palmer; T. L. Gustafson

doi:10.1117/12.946326

28 June 1985 Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon

D. M. Roberts, J. F. Palmer, T. L. Gustafson

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946326
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

We measured picosecond photoinduced absorption in hydrogenated amorphous silicon using independently tunable pump and probe wavelengths. We demonstrated a time modulation technique for obtaining picosecond photoinduced absorption decays that eliminates the bulk thermal background present with amplitude modulation techniques. The same apparatus is used to obtain photoinduced absorption decays over the microsecond time range. The picosecond photoinduced absorption decays are sensitive to changes in the pump and probe wavelengths.

Citation Download Citation

D. M. Roberts, J. F. Palmer, and T. L. Gustafson "Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946326

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