28 June 1985 Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon
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Abstract
We measured picosecond photoinduced absorption in hydrogenated amorphous silicon using independently tunable pump and probe wavelengths. We demonstrated a time modulation technique for obtaining picosecond photoinduced absorption decays that eliminates the bulk thermal background present with amplitude modulation techniques. The same apparatus is used to obtain photoinduced absorption decays over the microsecond time range. The picosecond photoinduced absorption decays are sensitive to changes in the pump and probe wavelengths.
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D. M. Roberts, D. M. Roberts, J. F. Palmer, J. F. Palmer, T. L. Gustafson, T. L. Gustafson, } "Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946326; https://doi.org/10.1117/12.946326
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