28 June 1985 Raman Spectroscopy Study Of Polish-Induced Surface Strain In <100> And <111> GaAs and InP
Author Affiliations +
We report measurements of the first-order Raman spectra of the longitudinal optic phonon from the <100-> and <111> surface of GaAs and InP which have been polished by various procedures. Non-destructive depth profiling was accomplished by using different lines of an Ar+ laser. The observed lineshape changes have been quantitatively accounted for by a model based on the convolution of the penetration depth of the light and the skin depth of the polish-induced surface strain. For the <100`- surface we find the polish-induced surface strain to be compressive, fairly homogeneous and about 2-3% in both materials, relatively independent of particle size. The inhomogeneity of the surface strain in the polishing plane is less than 0.3%. The strain skin depth is substantially less than the particle size although it does increase with increasing size and polish time. For the <111> surface, although the surface strain is also compressive, the average surface strain is only about 0.6% for GaAs and 1.2% for InP. The inhomogeneous strain is about 1.4% in both materials. Also for this surface the damage skin depth is of order the particle size. For both surfaces we find that disorder is a minor effect for the grit sizes used and the dominant damage is plastic deformation.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Shen, H. Shen, Z. Hang, Z. Hang, Fred H. Pollak, Fred H. Pollak, "Raman Spectroscopy Study Of Polish-Induced Surface Strain In <100> And <111> GaAs and InP", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946328; https://doi.org/10.1117/12.946328

Back to Top