12 April 1985 Sn-Te-Se Phase Change Recording Film For Optical Disks
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Proceedings Volume 0529, Optical Mass Data Storage I; (1985) https://doi.org/10.1117/12.946430
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
Sn-Te-Se amorphous-crystalline phase change recording film is analyzed on write/erase cyclability, erasing speed, and activation energy of crystallization. The Sn-Te-Se thin film, sandwiched by two SiO2 thin film layers, is deposited on an organic-thick-film coated glass substrate. Then, another organic thick film is coated onto these layers. For these samples, the maximum erasure(crystallization) speed by laser beam irradiation and other write/erase characteristics are measured. Information can be written and erased more than 106 times. The crystallization activation energy is also measured and found to be about 2.3eV. The life of the amorphous state is estimated to be about 10 years at 40°C. These experimental results show that Sn-Te-Se thin film is promising as a reversible phase change recording film.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Motoyasu Terao, Tetsuya Nishida, Yasushi Miyauchi, Takeshi Nakao, Toshimitsu Kaku, Shinkichi Horigome, Masahiro Ojima, Yoshito Tsunoda, Yutaka Sugita, Yasuhiro Ohta, "Sn-Te-Se Phase Change Recording Film For Optical Disks", Proc. SPIE 0529, Optical Mass Data Storage I, (12 April 1985); doi: 10.1117/12.946430; https://doi.org/10.1117/12.946430
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