9 April 1985 Alloying Au-Ge With Gaas By Ion Beam Mixing
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985); doi: 10.1117/12.946479
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
Rutherford backscattering, Auger electron spectroscopy and Cross-sectional Transmission electron microscopic techniques have been utilized to study the ion beam mixing of alternating Au-Ge film structure deposited by e-gun evaporation on GaAs. Ion beam mixing was carried out with 1 MeV Au+ and with 160, 140 and 125 keV Si+ ions at various doses. Alloying was observed between Au and Ge, and between Au-Ge and GaAs induced by ion beam mixing at room temperature. The mixing efficiency of Au+ ions is about a factor of five higher than that of Si+ ions. Depending on the mass, energy and dose of ions and thickness of Au-Ge film structure, ion beam mixing produced various amounts of damage in the interface region of GaAs. Electrical characterization of a selected ion beam mixed sample revealed the rectifying nature of the contact.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. S. Bhattacharya, A. K. Rai, H. Rashid, A. Ezis, P. P. Pronko, "Alloying Au-Ge With Gaas By Ion Beam Mixing", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946479; https://doi.org/10.1117/12.946479
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KEYWORDS
Gold

Gallium arsenide

Ions

Silicon

Germanium

Ion beams

Interfaces

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