9 April 1985 Alloying Au-Ge With Gaas By Ion Beam Mixing
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946479
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Rutherford backscattering, Auger electron spectroscopy and Cross-sectional Transmission electron microscopic techniques have been utilized to study the ion beam mixing of alternating Au-Ge film structure deposited by e-gun evaporation on GaAs. Ion beam mixing was carried out with 1 MeV Au+ and with 160, 140 and 125 keV Si+ ions at various doses. Alloying was observed between Au and Ge, and between Au-Ge and GaAs induced by ion beam mixing at room temperature. The mixing efficiency of Au+ ions is about a factor of five higher than that of Si+ ions. Depending on the mass, energy and dose of ions and thickness of Au-Ge film structure, ion beam mixing produced various amounts of damage in the interface region of GaAs. Electrical characterization of a selected ion beam mixed sample revealed the rectifying nature of the contact.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. S. Bhattacharya, R. S. Bhattacharya, A. K. Rai, A. K. Rai, H. Rashid, H. Rashid, A. Ezis, A. Ezis, P. P. Pronko, P. P. Pronko, "Alloying Au-Ge With Gaas By Ion Beam Mixing", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946479; https://doi.org/10.1117/12.946479

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