9 April 1985 An Overview Of SOI By Implantation Of Oxygen: Materials, Devices And Circuits
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985); doi: 10.1117/12.946492
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
Silicon on Insulators (SOI) formed by ion implantation of oxygen has been examined by several researchers including the present authors. This paper gives a brief review of this subject. The advantages of SOI versus Silicon on Sapphire (SOS) and bulk Si are discussed. The materials properties and the effects of ion implantation and anneal conditions are reviewed. Device modeling as it applies to SOI has been presented. Characteristics of devices built in SOI formed by ion implantation of oxygen are examined. Finally some circuit results are discussed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. E. Burnham, S. R. Wilson, "An Overview Of SOI By Implantation Of Oxygen: Materials, Devices And Circuits", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946492; https://doi.org/10.1117/12.946492
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KEYWORDS
Field effect transistors

Oxygen

Silicon

Oxides

Interfaces

Ion implantation

Capacitance

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