9 April 1985 Buried Oxide Formation By Ion Implantation
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985); doi: 10.1117/12.946493
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
High power oxygen ion beams have been used to produce a buried insulating layer in silicon wafers. Standard materials analysis techniques show that a thermally stable insulating layer is formed beneath the single crystal surface layer of silicon, serving to isolate the surface from the substrate.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Steeples, M. A. Guerra, "Buried Oxide Formation By Ion Implantation", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946493; https://doi.org/10.1117/12.946493
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KEYWORDS
Oxides

Silicon

Semiconducting wafers

Crystals

Oxygen

Ion implantation

Resistance

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