9 April 1985 Buried Oxide Formation By Ion Implantation
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946493
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
High power oxygen ion beams have been used to produce a buried insulating layer in silicon wafers. Standard materials analysis techniques show that a thermally stable insulating layer is formed beneath the single crystal surface layer of silicon, serving to isolate the surface from the substrate.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Steeples, K. Steeples, M. A. Guerra, M. A. Guerra, } "Buried Oxide Formation By Ion Implantation", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946493; https://doi.org/10.1117/12.946493
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