9 April 1985 MeV Implantation In The III-V's
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985); doi: 10.1117/12.946464
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
MeV implantation has a number of potential device and IC applications in both Si and the III-V's. Some of these have already begun to be realized in the Si technology. The development of III-V applications is, however, in a more embryonic stage. The primary thrust in the III-V's is toward increasing the range of devices which can be made by direct ion im-plantation to increase the level of device integration which can be attained. This paper will contrast the III-V technology with the Si, outline some of the potential applications for MeV implantation in the III-V's and discuss the basic research areas in which progress must be made in order to increase the use of MeV implantation in the III-V device and IC technology.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. B. Dietrich, "MeV Implantation In The III-V's", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946464; https://doi.org/10.1117/12.946464
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KEYWORDS
Silicon

Ion implantation

Gallium arsenide

Diodes

Doping

Diffusion

Field effect transistors

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