MeV implantation has a number of potential device and IC applications in both Si and the III-V's. Some of these have already begun to be realized in the Si technology. The development of III-V applications is, however, in a more embryonic stage. The primary thrust in the III-V's is toward increasing the range of devices which can be made by direct ion im-plantation to increase the level of device integration which can be attained. This paper will contrast the III-V technology with the Si, outline some of the potential applications for MeV implantation in the III-V's and discuss the basic research areas in which progress must be made in order to increase the use of MeV implantation in the III-V device and IC technology.