9 April 1985 Modeling Of Diffusion During Rapid Thermal Processing
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946474
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
Rapid annealing has been in use for several years but no simple modeling tools have been developed to help the process designer evaluate applications of rapid thermal processing. This paper gives a brief development of simple but comprehensive models for evaluating the redistribution of Gaussian implants when processed by a shuttered blackbody or similar sources. A detailed solution is obtained for the intrinsic diffusion case and an algorithm and a first order solution are obtained for the concentration dependent diffusion case. A method for comparing rapid thermal processing (RTP) machines is also described where two parameters are fit to the heat-up and cool-down portion of the cycle and an effective time at peak temperature, teff, is derived for the transient portion of the thermal cycle.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl Russo, Carl Russo, } "Modeling Of Diffusion During Rapid Thermal Processing", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946474; https://doi.org/10.1117/12.946474
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