9 April 1985 PREDICT - A New Design Tool For Shallow Junction Processes
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946472
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
A new one-dimensional, process estimator for the design of IC technologies (PREDICT) has been developed which rigorously solves coupled equations describing dopant behavior under modern processing conditions. All of the models in PREDICT have been verified with extensive experimental measurements. Such models include a new ion implantation algorithm with empirical parameters to describe the exponential tail formed through ion channeling, rapid thermal diffusion of B, As and P, accurate oxidation calculations including the effects of pressure, HC1 and doping concentrations, effects of stress and dopant precipitation and clustering, ion pairing, implantation through deposited or grown films (oxide, polysilicon, nitride), concentration effects, etc. PREDICT has been used to do accurate simulations of high dose B and BF2 implants/diffusions in both <100> and <111> Si. Considerations in these calculations include channeling during implantation, the effects of pre-amorphization, damage-induced dislocation networks and the enhanced diffusion of B outside of these networks, and precipitation of B using a 12 atom cluster model.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. B. Fair, R. Subrahmanyan, "PREDICT - A New Design Tool For Shallow Junction Processes", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946472; https://doi.org/10.1117/12.946472
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