The IONEX MeV Implanter System

Kenneth H. Purser; Marshall Cleland; H. Naylor; Theodore H. Smick

doi:10.1117/12.946462

9 April 1985 The IONEX MeV Implanter System

Kenneth H. Purser, Marshall Cleland, H. Naylor, Theodore H. Smick

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946462
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The emergence of gallium arsenide technology and the trend in silicon fabrication toward CMOS based systems and smaller device sizes suggest a number of important applications for implantation in the MeV range. These include: 1. The formation of deep wells with retrograde shape without the large thermal budget associated with "pre-dep and drive-in" procedures. 2. Post-fabrication customization of devices by implant through the sealing glass and other layers normally laid down as the final stages of a semiconductor process cycle. 3. Buried grid structures for device isolation against soft errors. 4. Gallium Arsenide device fabrication.

Citation Download Citation

Kenneth H. Purser, Marshall Cleland, H. Naylor, and Theodore H. Smick "The IONEX MeV Implanter System", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946462

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