9 April 1985 The Influence Of Ion Implantation On Solid Phase Epitaxy Of Amorphous Silicon Deposited By LPCVD
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946469
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
The solid phase epitaxy of amorphous silicon deposited by LPCVD on (100) Si windows was achieved by implanting the deposited Si with a high dose of either silicon or phosphorus ions and subsequently annealing it in a furnace. Recrystallization proceeded by columnar growth followed by a lateral enlargement of grains. The regrowth rate of LPCVD amorphous silicon was found to be slower than that of ion implanted damaged region. Values of annealing time (tr) required to recrystallize the LPCVD amorphous silicon for the P-implanted samples were consistently a factor four lower than values of tr for the Si implanted samples. For both P and Si implanted specimens, microtwins were observed in the recrystallized region with a higher density for the Si implanted samples. The random nucleation of polysilicon on Si02 depressed by high dose P-implantation gave enough time for the lateral growth of 2-3 μm to occur in the adjacent window regions.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wang yang-yuan, N. W. Cheung, D. K. Sadana, C. Jou, M. Strathman, "The Influence Of Ion Implantation On Solid Phase Epitaxy Of Amorphous Silicon Deposited By LPCVD", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946469; https://doi.org/10.1117/12.946469
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